Mitsubishi Electric Automation Launches New Module to Optimize Industrial Control Systems

June 25, 2021 by Nancy Chenyizhi Liu

Mitsubishi Electric Corporation plans to launch the T-series 2.0 kV power module for industrial use.

According to Mitsubishi Electric, the T- series 2.0 kV insulated gate bipolar transistor (IGBT) module is one of “the world’s first IGBT with 2.0 kV withstand voltage.” It is designed to control and shrink the size of renewable-energy power converters


IGBTs in Industrial Applications

As a control device with large bipolar current-carrying capability, the IGBT is developed to achieve high efficiency, fast switching, and low conduction and switching loss. IGBTs are widely used as electronic switch devices for variable-frequency drives (VFDs), uninterruptible power supplies (UPS), induction cookers, arc-welding machines, and variable-speed refrigerators.


An industrial power plant where these components are controlled and maintaned. 


The IGBT also can be used as switching amplifiers for industrial control systems and sound systems. Like power metal-oxide-semiconductor field-effect transistor (MOSFET), IGBT is one of the most primarily used power transistors.


Importance of Using IGBTs to Optimize Control Systems

The application and demand for understanding how to efficiently control electric power can help to reduce the carbon footprint. The renewable-energy potential for industrial power grids is massive. Deploying higher system operating voltages can help to increase the power-conversion efficiency, so the DC1500V-rated power converters have been developed. 

Mitsubishi Electric designed the T- series 2.0 kV IGBT module to be suitable for these power converters, expected to help downsizing and efficiency-raising.


The IGBT Module

Mitsubishi’s T- series 2.0 kV IGBT module may help to simplify the design and increase the power density of renewable-energy power supply systems. The DC1500V-rated power converters are facing challenges in design using conventional 1.7 kV-rated IGBTs. The 2.0 kV IGBT is more suitable for these compact power converters.


The T- series 2.0 kV IGBT module. Image used courtesy of Mitsubishi Electric Automation


Engineers can use this module to develop more compact and simpler power converters rated DC1500V, without the need for complex circuit topology, including the I-type three-level neutral point clamped (3L-NPC).

The T- series 2.0 kV IGBT module consists of a 7th-generation IGBT with carrier stored trench bipolar transistor (CSTBT) utilizing the carrier cumulative effect and relax field of cathode (RFC) diodes for high withstand voltage. This design can help lower the power loss for high-voltage applications.

The size for this module is 80 X 100 mm, the rated current and voltage are 400 A and 2.0 kV, and the isolation voltage is 4 kVrms.According to the announcement, Mitsubishi Electric plans to launch its 2.0kV IGBT T-series on June 30.


Featured image used courtesy of Mitsubishi Electric Automation